We report on the fabrication and control of MoS₂/MoO₂ nanocomposites exhibiting various optoelectronic properties. We demonstrate the growth of various compositions, shapes and crystalline structures by chemical vapor deposition (CVD). Microplates 1 to 30 µm to highly crystalline nanowires ∼ 100 nm in diam. are obtained. Our findings show that depending on the MoO₂ content the band gap varies from 2 eV to 2.4 eV, whereas nanowires sample exhibits the lowest reflectance ≤ 10 % for λ ≥ 450 nm. Furthermore, the photoelectric properties of the produced samples were characterized by integrating them into photoconductive devices. Our results demonstrate a good photoresponse achieving 2 × 104 %, a responsivity as high as 1.13 mA/W, and a specific detectivity of 2.6 × 109 Jones for the nanowires, with a relatively rapid rise and decay times 1.6 s and 0.8 s, respectively. This work emphasizes the high potential of MoS₂/MoO₂ nanocomposite for the development of highly responsive optoelectronic devices.