Over the past decade, the advancements in fabrication techniques and material purity for silicon carbide (SiC) power devices have led to the growing interest in using optically active point defects, also called color centers, within SiC for quantum applications at room temperature. One promising application is the development of near-infrared (NIR) single photon sources (SPS), using color centers within SiC, such as the silicon vacancy (VSi). Recent research indicates that the fabrication of micro/nano-pillar arrays in SiC can significantly enhance the light collection efficiency of SPS and while studies have explored the optimization of pillar diameter and height, the impact of pillar spacing on light collection remains, as far as we are aware, unexplored experimentally. This work focuses on fabricating nano-pillar arrays of varying diameters and spacings in 4H-SiC to enhance the light collection of the silicon vacancy (VSi) and the divacancy carbon-silicon (VCVSi).